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| HFA180NH40PBF Vishay High Power Products HEXFRED(R) Ultrafast Soft Recovery Diode, 180 A FEATURES Lug terminal anode * Very low Qrr and trr * Lead (Pb)-free * Designed and qualified for industrial level RoHS COMPLIANT BENEFITS Base cathode * Reduced RFI and EMI * Reduced snubbing HALF-PAK (D-67) DESCRIPTION HEXFRED(R) diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and dI/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. PRODUCT SUMMARY IF(AV) VR IF(DC) at TC 180 A 400 V 200 A at 100 C ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Continuous forward current Single pulse forward current Non-repetitive avalanche energy Maximum power dissipation Operating junction and storage temperature range SYMBOL VR IF IFSM EAS PD TJ, TStg TC = 25 C TC = 100 C Limited by junction temperature L = 100 H, duty cycle limited by maximum TJ TC = 25 C TC = 100 C TEST CONDITIONS MAX. 400 395 200 1200 1.4 657 263 - 55 to + 150 mJ W C A UNITS V ELECTRICAL SPECIFICATIONS (TJ = 25 C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage SYMBOL VBR IR = 100 A IF = 180 A Maximum forward voltage VFM IF = 360 A IF = 180 A, TJ = 125 C Maximum reverse leakage current Junction capacitance Series inductance IRM CT LS TJ = 125 C, VR = 400 V VR = 200 V See fig. 2 See fig. 3 See fig. 1 TEST CONDITIONS MIN. 400 TYP. 1.08 1.22 0.99 370 6.0 MAX. 1.46 1.8 1.34 4 500 mA pF nH V UNITS From top of terminal hole to mounting plane Document Number: 94061 Revision: 01-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 HFA180NH40PBF Vishay High Power Products HEXFRED(R) Ultrafast Soft Recovery Diode, 180 A TEST CONDITIONS TJ = 25 C TJ = 125 C TJ = 25 C TJ = 125 C TJ = 25 C TJ = 125 C TJ = 25 C TJ = 125 C IF = 135 A dIF/dt = 200 A/s VR = 200 V MIN. TYP. 90 280 9 18 300 2650 300 290 MAX. 140 440 16 32 950 6300 UNITS ns DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 C unless otherwise specified) PARAMETER Reverse recovery time See fig. 5 Peak recovery current See fig. 6 Reverse recovery charge See fig. 7 Peak rate of recovery current See fig. 8 SYMBOL trr IRRM Qrr dI(rec)M/dt A nC A/s THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Typical thermal resistance, case to heatsink Approximate weight minimum maximum minimum maximum HALF-PAK module SYMBOL TJ, TStg RthJC RthCS DC operation See fig. 4 Mounting surface, smooth and greased TEST CONDITIONS VALUES - 55 to 150 0.19 C/W 0.05 30 1.06 3 (26.5) 4 (35.4) 3.4 (30) 5 (44.2) N*m (lbf * in) g oz. UNITS C Mounting torque Terminal torque Case style www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 94061 Revision: 01-Aug-08 HFA180NH40PBF HEXFRED(R) Ultrafast Soft Recovery Diode, 180 A IF - Instantaneous Forward Current (A) 1000 160 140 Vishay High Power Products Maximum Allowable Case Temperature (C) 120 100 80 60 40 20 DC 100 10 TJ = 150 C TJ = 125 C TJ = 25 C 1 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0 100 200 300 400 500 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current IF(AV) - DC Forward Current (A) Fig. 4 - Maximum Allowable Case Temperature vs. DC Forward Current 10 TJ = 150 C 400 350 TJ = 125 C 300 TJ = 125 C TJ = 25 C IF = 200 A IF = 180 A IF = 70 A IR - Reverse Current (A) 1 250 200 150 TJ = 25 C 100 50 0.0001 100 0 100 0.01 0.001 200 300 400 trr (ns) 0.1 1000 VR - Reverse Voltage (V) Fig. 2 - Typical Reverse Current vs. Reverse Voltage dIF/dt (A/s) Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt 10 000 80 70 60 TJ = 125 C TJ = 25 C CT - Junction Capacitance (pF) 1000 TJ = 25 C IRRM (A) 50 40 30 20 10 IF = 200 A IF = 180 A IF = 70 A 100 1 10 100 1000 0 100 1000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage dIF/dt (A/s) Fig. 6 - - Typical Recovery Current vs. dIF/dt Document Number: 94061 Revision: 01-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 HFA180NH40PBF Vishay High Power Products 6000 5000 4000 TJ = 125 C TJ = 25 C HEXFRED(R) Ultrafast Soft Recovery Diode, 180 A 10 000 3000 2000 1000 0 100 dI(rec)M/dt (A/s) Qrr (nC) IF = 200 A IF = 180 A IF = 70 A 200 A 180 A 70 A 1000 TJ = 125 C TJ = 25 C 1000 100 100 1000 dIF/dt (A/s) Fig. 7 - - Typical Stored Charge vs. dIF/dt dIF/dt (A/s) Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt 1 ZthJC - Thermal Response 0.1 0.01 Single pulse (thermal response) 0.001 0.00001 0.0001 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 9 - Maximum Thermal Impedance ZthJC Characteristics www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 94061 Revision: 01-Aug-08 HFA180NH40PBF HEXFRED(R) Ultrafast Soft Recovery Diode, 180 A VR = 200 V Vishay High Power Products 0.01 L = 70 H D.U.T. dIF/dt adjust D G IRFP250 S Fig. 10 - Reverse Recovery Parameter Test Circuit (3) IF 0 trr ta tb Qrr (2) (4) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 11 - Reverse Recovery Waveform and Definitions L = 100 H High-speed switch Rg = 25 Current monitor Freewheel diode IL(PK) D.U.T. + Vd = 50 V V(AVAL) VR(RATED) Decay time Fig. 12 - Avalanche Test Circuit and Waveforms Document Number: 94061 Revision: 01-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 HFA180NH40PBF Vishay High Power Products ORDERING INFORMATION TABLE Device code HEXFRED(R) Ultrafast Soft Recovery Diode, 180 A HFA 1 1 2 3 4 5 6 180 2 N 3 H 4 40 5 PbF 6 - HEXFRED(R) family, electron irradiated - Average current rating - N = Not isolated - H = HALF-PAK - Voltage rating (400 V) - Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95020 www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 94061 Revision: 01-Aug-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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